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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB550 DESCRIPTION *With TO-66 package *Low collector saturation voltage APPLICATIONS *For low frequency power amplification *For low speed and power switching PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratings(Ta=) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -100 -70 -5 -5 25 150 -55~150 UNIT V V V A W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SB550 MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=-1mA; IE=0 -100 V V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0 -70 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA; IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.5A -1.0 V VBEsat Base-emitter saturation voltage IC=-5A; IB=-0.5A -1.5 V ICBO Collector cut-off current VCB=-80V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -0.1 mA hFE DC current gain IC=-1A ; VCE=-5V 30 200 fT Transition frequency IC=-0.1A ; VCE=-10V 5 MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB550 Fig.2 outline dimensions 3 |
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